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Read the article    from Nature By Sang-Wook Cheong1,2 & Maxim Mostovoy3 

 

We report the observation of a magnetic polarization of the O 2p states in YMn2O5 through the use of soft x-ray resonant scattering at the oxygen K edge. Remarkably, we find that the temperature dependence of the integrated intensity of this signal closely follows the macroscopic electric polarization, and hence is proportional to the ferroelectric order parameter. This is in contrast with the temperature dependence observed at the Mn L3 edge, which reflects the Mn magnetic order parameter. First-principles calculations provide a microscopic understanding of these results and show that a spin-dependent hybridization of O 2p and Mn 3d states results in a purely electronic contribution to the ferroelectric polarization, which can exist in the absence of lattice distortions.

Read the article: Physical Review Letters

 

The piezoresistance effect of silicon has been widely used in mechanical sensors, and is now being actively explored in order to improve the performance of silicon transistors. In fact, strain engineering is now considered to be one of the most promising strategies for developing high-performance sub-10-nm silicon devices. Interesting electromechanical properties have been observed in carbon nanotubes. In this paper we report that Si nanowires possess an unusually large piezoresistance effect compared with bulk. For example, the longitudinal piezoresistance coefficient along the 111 direction increases with decreasing diameter for p-type Si nanowires, reaching as high as -3,550 10-11 Pa–1, in comparison with a bulk value of -94 10-11 Pa-1. Strain-induced carrier mobility change and surface modifications have been shown to have clear influence on piezoresistance coefficients. This giant piezoresistance effect in Si nanowires may have significant implications in nanowire-based flexible electronics, as well as in nanoelectromechanical systems.

 

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